Shingle clip system and method

ABSTRACT

The present disclosure includes roof shingle systems. One roof shingle system includes at least two shingles, a shingle clip, a drip edge, and a power collection unit. Each shingle has a semiconductive layer configured to deliver power, electrical current/voltage, and/or control signals to the power collection unit. The shingle clip continues a conductive path between the two shingles. The drip edge is at least partially insulated and partially conductive, and the conductive portion continues the path from the shingle semiconductive layer to the power unit where energy is collected. One method of installing a shingle system includes the steps of positioning a shingle having a transducer in the form of a semiconductive layer, and positioning a shingle clip to engage the semiconductive layer of the shingle.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of pending U.S. patent application Ser.No. 15/711,816, filed Sep. 21, 2017, the disclosure of which isincorporated herein by reference in its entirety.

BACKGROUND

Embodiments of this disclosure relate generally to shingle clip systemsand methods. More particularly, embodiments relate to conductive shingleclips situated so as to transfer energy converted from a transducer orsemiconductor.

Traditional roofing systems typically consist of a plurality ofidentical roofing shingles arranged in a pattern (i.e. overlapping)across the entire roof of a structure. In this manner, traditionalshingles provide for protection from the environment and may have someaesthetic effect.

With the increase of energy prices, and the subsequent increase inenergy bills, there exists a market demand for energy consumers to beable to generate their own electricity, thus reducing net energy costs.Therefore, some consumers have turned to solar (also known as“photovoltaic”) panels to generate electricity. Such solar systems areoften roof-mounted. With this trend, roofing professionals may needadditional training and expertise, both in roofing systems andelectrical systems, to properly handle and install such systems—or anelectrician may be needed. Either way, another layer of cost andinconvenience is added to the system.

Accordingly, there exists a need for an easy-to-install shingle systemhaving a transducer and hardware to transfer that converted energy; forexample, a system that is easy to manufacture, install, and works withthe pre-existing shingles in the market. Moreover, there exists a needfor such a system to emulate traditional shingle systems to allow forease of installation without specialized knowledge.

SUMMARY

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an extensive overview of the invention. It is notintended to identify critical elements of the invention or to delineatethe scope of the invention. Its sole purpose is to present some conceptsof the invention in a simplified form as a prelude to the more detaileddescription that is presented elsewhere.

In one embodiment, a shingle clip is a cube and includes first andsecond apertures. The first aperture has a C-shape further defined as afirst aperture top surface, a first aperture bottom surface, and a firstaperture end surface; the first aperture is located on a first widthface of the cube and separates the first width face into first upper andfirst lower side surfaces. The second aperture has a C-shape furtherdefined as a second aperture top surface, a second aperture bottomsurface, and a second aperture end surface; the second aperture islocated on a second width face of the cube. The second width face is onan opposed end of the first width face of the cube, and the first andsecond apertures are sized and shaped such that a shingle side may bepositioned within. The distance between the first and second apertureend surfaces is smaller than a height of the cube.

In another embodiment, a shingle system has a shingle clip and a roofshingle. The shingle clip is a cube and has first and second apertures.The first aperture has a C-shape further defined as a first aperture topsurface, a first aperture bottom surface, and a first aperture endsurface; the first aperture is located on a first width face of the cubeand separates the first width face into first upper and first lower sidesurfaces. The second aperture has a C-shape further defined as a secondaperture top surface, a second aperture bottom surface, and a secondaperture end surface; the second aperture is located on a second widthface of the cube. The second width face is on an opposed end of thefirst width face of the cube, and the first and second apertures aresized and shaped such that a shingle side may be positioned within. Thedistance between the first and second aperture end surfaces is smallerthan a height of the cube. The roof shingle has a base layer with anelongate rectangular shape in a longitudinal direction for a roofshingle length, an asphalt layer situated upon the base layer, a surfacegranule layer situated upon a top surface of the asphalt layer, and asemiconductive layer. The semiconductive layer is an elongate strip inthe longitudinal direction across the roof shingle length and issituated near a center of the roof shingle. The semiconductive layer isa transducer.

In still another embodiment, a method of installing a shingle systemincludes the steps of: positioning a drip edge along an incline of aroof, the drip edge having a conductive portion and an insulatedportion; positioning a shingle having a transducer in the form of asemiconductive layer engaging at least the conductive portion of thedrip edge; and positioning a shingle clip to engage the semiconductivelayer of the shingle. The shingle clip is a cube and has first andsecond apertures. The first aperture has a C-shape further defined as afirst aperture top surface, a first aperture bottom surface, and a firstaperture end surface; the first aperture is located on a first widthface of the cube and separates the first width face into first upper andfirst lower side surfaces. The second aperture has a C-shape furtherdefined as a second aperture top surface, a second aperture bottomsurface, and a second aperture end surface. The second aperture islocated on a second width face of the cube, and the second width face ison an opposed end of the first width face of the cube. The first andsecond apertures are sized and shaped such that a shingle side may bepositioned within. The distance between the first and second apertureend surfaces is smaller than a height of the cube.

In yet another embodiment, a method of installing a shingle systemincludes the steps of positioning a shingle having a transducer in theform of a semiconductive layer; and positioning a shingle clip to engagethe semiconductive layer of the shingle.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an exemplary structure with portions of a roof cutaway, the structure having a shingle system according to various aspectsto the present disclosure.

FIG. 2 is an exploded view of the exemplary structure of FIG. 1 and theshingle system with the semiconductive pathways shown in phantom.

FIG. 3A is a front view of a three tab shingle according to variousaspects to the present disclosure with portions cut away.

FIG. 3B is a back perspective view of a three tab shingle of FIG. 3Awith portions shown in phantom.

FIG. 4A is a front view of a three tab shingle with portions cut awayaccording to a second embodiment.

FIG. 4B is a back perspective view of a three tab shingle of FIG. 4A.

FIG. 5 is a front view of a section of the shingle system of FIG. 1 withportions shown in phantom.

FIG. 6 is a perspective view of a shingle clip according to oneembodiment of the present disclosure.

FIG. 7 is a side view of the shingle clip of FIG. 6 illustratedin-between two shingles shown in phantom.

FIG. 8 is a magnified corner portion of FIG. 1 with portions of theshingle system cut away and a drip edge according to various aspects ofthe present disclosure.

FIG. 9 is a cross-section view of a drip edge according to variousembodiments of the present disclosure.

FIG. 10 is a cross-section view of a drip edge according to otherembodiments of the present disclosure.

FIG. 11 is a magnified corner portion of FIG. 1 with portions of theshingle system cut away and a first and second drip edge according tovarious aspects of the present disclosure.

FIG. 12 is a flowchart illustrating various steps performed by shinglesystem installation according to embodiments of the present disclosure.

DETAILED DESCRIPTION

Reference will now be made in detail to exemplary embodiments, examplesof which are illustrated in the accompanying drawings. It is to beunderstood that other embodiments may be utilized and structural andfunctional changes may be made. Moreover, features of the variousembodiments may be combined or altered. As such, the followingdescription is presented by way of illustration only and should notlimit in any way the various alternatives and modifications that may bemade to the illustrated embodiments. In this disclosure, numerousspecific details provide a thorough understanding of the subjectdisclosure. It should be understood that aspects of this disclosure maybe practiced with other embodiments.

FIG. 1 illustrates an exemplary structure 1 according to various aspectsof the present disclosure. Structure 1 is preferably a building, such asa residential, commercial, industrial, or mixed-use building, a toolshed, a barn, a kiosk, a gazebo, a billboard, and the like. Structure 1may also be a mobile structure, such as a mobile home, a recreationalvehicle, a food truck, and the like. For purposes of illustration withregard to exemplary FIG. 1, structure 1 will be described as aresidential building; that is, a house.

Structure 1 includes a roof 2 and exterior walls 3, wherein roof 2 issupported by wall 3. As illustrated in FIG. 1, roof 2 covers an interiorspace bounded by walls 3, and may include an overhang (not shown) whichcovers an exterior space external to the walls 3. Furthermore, it isforeseen that the roof 2 may be a flat surface, a curved surface, or acombination of flat, curved, and angled surfaces.

The roof 2 includes a support structure 5, such as pillars, internalwalls, and/or cross beams or trusses. Roof 2 may additionally include aninsulating material adjacent the support structure 5 to preventelectrical contact with fasteners 40 and thereby prevent potential eddycurrents, hall voltages, and shorting the circuit. Situated over thesupport structure is a sheathing 7. The sheathing 7 is a thin flatsurface which extends across the entire dimension of the roof 2. Thesheathing 7 may comprise plywood, strand board, fiberglass, and thelike. The sheathing 7 may alternatively be a composite substrateincluding a material configured to prevent voltage leaks throughsemi-conductive plywood or strand board substrate layers.

Situated on top of the sheathing layer 7 is an underlayment layer 9. Theunderlayment layer 9 is a thin surface which extends across the entiredimension of the roof 2 and sheathing layer 7. The underlayment layer 9may be thinner than the sheathing layer 7 and may comprise felt; tarpaper; Spiral cut, Double-laminated and Machine direction drawing (SDM)strength film; or the like.

Situated around the edges 8 of the roof 2 is a starter or undercourseshingle layer 10. This layer 10 may be a single set of asphalt singleslaid down in a row or column without overlap, to absorb the flow ofwater and keep water from deteriorating the edges 8.

Referring to FIG. 2, the roof 2 further includes a shingle system 20.The shingle system 20 has a transducer device that includes a shingle22, a shingle clip 24, a drip edge 26, and a power unit 28. Theshingle(s) 22 are preferably configured to deliver power and/orelectrical current/voltage and/or control signals between asemiconductive layer 30 and the power unit 28, such as a battery, apower grid, a computer, and the like as will be further discussed below.

Referring to FIGS. 3A-3B, a shingle 22 in an embodiment of thedisclosure is shown. The shingles in the illustrated example is a threetab configuration. The shingle 22 includes the following layers: asemiconductive layer 30, a base layer 32, a microweave layer 33, anasphalt layer 34, a surface granule layer 36, and a sealant layer 38.The base layer 32 may be made from organic materials, such as paper(waste or recycled paper), cellulose, wood fiber, or other materialssaturated with asphalt to make it waterproof, or the base layer 32 maybe made from a fiberglass material. In such a case, the fiberglassmaterial may be made, for example, from wet, random-laid fiberglassbonded with urea-formaldehyde resin.

The semiconductive layer 30 converts one form of energy to an electricalcharge or current. The semiconductive layer 30 may (for example) bewafers of semiconductive material aligned in a row, may (for example) betape or other such adhesive, or may (for example) be in the form ofpaint and applied to the base layer 32. The semiconductive layer 30 runslengthwise with the shingle 22 to create a series pathway A (FIG. 2).The semiconductive layer 30 may be on the front side 23, the back side27, or on both sides 23, 27.

The semiconductive layer 30 may be a thermoelectric generator in someembodiments, wherein heat is transformed to electrical voltage orenergy. This is able to convert not the photons of the sun, but of theheat produced by the sun on the roof 2. Such semiconductive material maybe bismuth telluride (Bi2Te3), lead telluride (PbTe), silicon germanium(SiGe), Silicon Phosphorus Boron (SiPB), and the like. These materialsmust have both high electrical conductivity (σ) and low thermalconductivity (κ) to be good thermoelectric materials. The thermalconductivity of semiconductors can be lowered without affecting theirhigh electrical properties using nanoparticles and nanoparticlesimpurities (doping). This can be achieved by creating nanoscale featuressuch as particles, wires, or interfaces in bulk semiconductor materials.

It is foreseen that an additional convection layer may be provided underthe shingle tiles 22 or as an additional layer to the individual shingle22 itself to aid in the heat transfer of the semiconductive layer 30 orin the heat differentiation in the semiconductive layer 30. Theconvection layer may be made from material having molecules randomlymoving through Brownian motion or diffusion or large scale motion ofmolecules or advection or some material or materials having acombination of the two modes. The convection layer also adds aninsulative layer to the roof and can assist in air control in thedwelling 1.

In other embodiments, the semiconductive layer 30 may be vibrationalgenerators, wherein a semiconducting crystal is put under strain bykinetic energy, i.e. sound or force, and the vibration creates a smallamount of current due to the piezoelectric effect. Such a layer 30 maybe more advantageous to populations where the weather is more tropical,though it may also work sufficiently in other environments. The layer 30may utilize the vibrations from rain drops, hail, snow, sleet, pressureinvolved from high winds, and the sound of thunder to create energy. Itis foreseen that the semiconductive layer 30 may be several strips ofdifferent material, wherein each performs a specific task, i.e. onematerial converts heat to energy, another sound to energy, and so forth.It is also foreseen that the same semiconductive material may performall the functions of the transducers mentioned and those laterdeveloped.

In some embodiments of a vibrational generator, the semiconductor layer30 may be an adhesive comprising a plurality of three-dimensional (3D)nanostructures. The 3D nanostructure may, for example, include a coreand a plurality of spokes extending radially outwardly from the core.The spokes may extend outwardly at a variety of angles. Thenanostructure may be formed of one or more materials which give thenanostructure semiconductive characteristics that create charge and/orvoltage. During a thunderstorm, the roof 2 may experience hail, whichexerts an applied energy on the shingles which, due to the enhancedadhesive having the piezoelectric effect, when the shingles receive anapplied energy from the hail, energy is at least partially transferredto the 3D nanostructures such that the nanostructures flex or compress.Here, because the energy may be greater, the nanostructures mayexperience a greater amount of compression. The nanostructures thenreturn to their natural state due to the elasticity of the nanostructures, which returns as an applied energy to the semiconductorlayer 30.

The semiconductive layer 30 may be applied or constructed such that adiode is created, directing the current produced to flow in onedirection. The diodes could change the direction of the current, thereincreating an alternating current situation, which would allow the currentto travel further across larger roofs 2.

The semiconductive layer 30 may be constructed as a data collectionflow, in which data such as shingle humidity, total energy harvest ofall shingle, individual shingle harvest, type of energy converted (i.e.rain vibration versus heat), which side of the roof harvests moreenergy, individual shingle temperature, etc. can be collected and savedat the energy collector. Such data can then be converted into reportsthat can be viewed on a display, such as a computer, cellular phone,tablet, and the like. Such reporting can be used to determine the lifeof individual shingles 22, i.e. if there is rot or water retention inthe shingles 22.

The base layer 32 and semiconductive layer 30 are then coated withasphalt or other cement/stone mixture creating the asphalt layer 34 onall sides. The asphalt layer 34 contains mineral fillers that make theshingle 22 waterproof and resist fire better. An additional layer 33,such as a microweave layer or additive known asstyrene-butadiene-styrene (SBS), sometimes called modified or rubberizedasphalt, is sometimes added to the asphalt mixture to make shingles moreresistant to thermal or physical cracking, as well as more resistant todamage from hail impacts, and may also be present. It is foreseen thatthe semiconductor layer 30 may have a protective layer applied atop,such that when the asphalt layer is applied, it does not affect themechanics of the semiconductive layer 30.

The surface granule layer 36 covers the asphalt layer 34 on the frontsurface 23 of the shingle 22. The surface granule layer 36 may be slate,schist, quartz, vitrified brick, stone, ceramic granules, and the like.The back side may also be treated with sand, talc, or mica, for example,to prevent the shingles 22 from sticking to each other before use. Somemanufacturers use a fabric backing known as a “scrim” on the back sideof shingles 22 to make them more impact resistant, and this may be usedin embodiments of the current invention as well.

The sealant layer 38 is applied to the front surface 23 and sometimes tothe back surface. The sealant layer 38 may be an adhesive that seals theshingles 22 to one another such that the shingles better resist beingblown off by wind or other means. It is foreseen that the semiconductivelayer 30 and the sealant layer 38 may be a unitary layer or applied oneatop the other to create a conductive path A (FIG. 2).

With reference to FIG. 3B, the back side 27 of the shingle 22 isillustrated, and situated on both sides 63 of the shingle 22 areapertures or spots 25 where layers 33, 34, and 36 were not laid on; thisis such that the conductive pathway A may continue. The spots 25 aresized and shaped such that the clip 24 will cover all or substantiallyall of the aperture 25 once the clip 24 is in position. The aperture 25also acts as a placeholder to aid in situating the clip 24. It is alsonoted that the aperture 25 mates with the drip edge 26 to continue theelectrical conductive pathway A as will be further explained below.

Referring to FIGS. 4A-4B, a shingle 22′ of another embodiment of thedisclosure is shown. The shingle 22′ has a front surface 23′ that issimilar to a standard shingle known in the art. For example, the shingle22′ may not have an internal semiconductive layer 30 as the shingle 22does, but instead of or in combination with the semiconductive layer 30has a semiconductive layer 30′ applied on the back external surface 27′of the shingle 22′. The semiconductive layer 30′ may be tape, adhesive,or in the form of paint and applied to the backside 27′ beforeinstallation. In some embodiments, the semiconductive layer 30′ isapplied at the installation site rather than being manufactured with theshingle 22′; in other embodiments, the semiconductive layer 30′ isapplied before reaching the installation site. The location of thesemiconductive layer 30′ on the exterior of the shingle 22′ may aid intransfer from layer 30′ to clip 24′.

Referring to FIG. 5, the shingle system 20 includes individual shingles22 including ridge shingles 23 at the top of the structure 1 and shingleclips 24 that are attached to the individual shingles 22, such that acontinuous conductive flow is not interrupted from one shingle 22 to thenext. The shingle clips 24 have a low profile so as not affect thesealant layer 38 from sealing the shingles 22 one atop the other, so asto avoid blow off.

Referring to FIGS. 6-7, the shingle clip 24 may be shaped as anelongated “double-C” clip or clasp. The clips 24 are positioned in thesemiconductive pathway A in-between two adjacent shingles 22 (FIG. 7). Awidth 49 of the shingle clip 24 is substantially similar to thethickness of the semiconductive layer 30 (FIG. 4). The clip 24 has a topsurface 50, a bottom surface 52, side surfaces 54, 55, and may furtherincludes edge surfaces 56, 57, 58, 59. Adjacent the top surface 50 arethe edge surfaces 56, 58, and adjacent the bottom surface 52 is the edgesurfaces 57, 59. The edge surfaces 56, 57, 58, 59 may be sloped downwardtoward the shingle 22, so as to allow for a sliding surface when thenext shingle 22 is installed atop the shingle clip 24.

Situated between edge surfaces 56, 57 is a first shingle aperture 60 andlikewise, situated between edge surfaces 58, 59 is a second shingleaperture 62. The first and second apertures 60, 62 are sized and shapedsuch that a thickness of the shingles 22 may be situated within theapertures 60, 62 (FIG. 7). The first aperture 60 is defined by an uppersurface 64, a lower surface 66, and an end surface 68. Likewise, thesecond aperture 62 is defined by a second aperture upper surface 74,lower surface 76, and end surface 78. The end surfaces 68, 78 create anabutting surface for an end 63 of a shingle 22. A portion 80 of the sidesurface 54 separates the first and second apertures 60, 62. Thethickness of portion 80 is small (i.e. 1-2 mm thick), so as not tocreate a large separation between shingles 22 and thus defeat thepurpose of the shingles 22. The thickness of the portion 80 is typicallysmaller than the height of the clip 24.

Referring now to FIG. 8, a drip edge 26 is shown in abutment with eachconductive pathway A creating a parallel resistance path. The drip edge26 has further features than a standard drip edge 91 illustrated along abottom 93 of the roof 2. In some embodiments, the drip edge 91 may beinsulated completely to minimize energy leakage, for example a drip edgemade from a plastic material or a metal drip edge that has been coatedwith an insulation layer.

In the illustrated embodiment, the drip edge 26 has a “D” style edge,but other edges may also be used, such as hemmed roof, “T” style, 3-way,and the like. The drip edge 26 has a top surface 92, and located on thetop surface 92 are ridges or bumps 94. These bumps 94 are positionedsuch that they will interact and at least engage the aperture 25 tocontinue the electrical flow.

With reference to FIG. 9, a drip edge 26 is shown as created bymanufacturing the drip edge 26 from two materials, one insulative 110(i.e. plastic) and the other conductive 112, such that a secondconductive pathway B is created that mates up with the first conductivepathway A (FIG. 8). With reference to FIG. 10, a drip edge 26′ may becreated with standard sheet metal drip edge 91 and coated with aninsulative layer 97 so as to create the second conductive pathway B′(FIG. 10). These examples are not meant to be limiting, as there may because to create a non-uniform conductive pathway B; as an example, theshape of the roof 2 may dictate such. In such a case, there may bebreaks (not shown) in the conductive pathway B, therein forcing theenergy to travel back lengthwise of the roof 2 rather than up and downthe sloped sides 95 (e.g., C-shaped, S-shaped).

The conductive drip edge 26 may be along both sides 95 of the roof 2,along one side 95 of the roof 2, or along both sides 95 and the bottomof the roof 93. In a first configuration (or “parallel configuration”),two drip edges 26 are positioned with one on each side 95, creatingsecond and third conductive pathways B. Here, the energy flows equallyin both directions. This configuration allows for energy collection tooccur on both sides of the house 1 as will be further discussed below.

In a second configuration (or “series configuration”), a single dripedge 26 is positioned on one side 95 (FIG. 8). The other side has aninsulated drip edge 91, therein grounding that side 95. The clips 24 areconverted to diodes to direct the current produced in the opposeddirection towards the conductive pathway B in the drip edge 26 and thenfurther to energy collection or battery 28.

In a third configuration (or “series parallel configuration”), bothsides 95 have conductive pathways B, C, and the bottom edge 93 of theroof 2 also has a conductive pathway D (FIG. 11). In this configuration,a further resistive path D on the drip edge 91′ creates a shuntresistance, forcing each pathway to have an equal voltage or currenttraveling through them. This may become necessary in, for example, adesert climate, where high heat is present nearly all year long and theenergy output may overload the pathways A, B, C, especially if unevenheat is the cause. Another example includes tropical climates; too manyvibrations could potentially overload the circuit, but the shuntresistance at the bottom edge 93 may assist in avoiding thesesituations.

As depicted in the drawings, a lower electrode 100, such as insulatedwire, is connected to the terminal of a collection mechanism 28, such asa battery. The collection mechanism 28 may also be connected to an upperelectrode 102 by means of a second electrical connection, such asinsulated wire. It is understood that the collection mechanism 28 of thesystem 20 may, in the alternative, comprise a conventional electricalinverter system or a mechanism for transferring the generatedelectricity back to the electrical grid.

With reference to FIG. 12, a method 200 of installing the system isdescribed. In step 201, a typical roof 2 is attached to a structure 1,with the roof having at least one of: a support structure 5, a sheathinglayer 7, an underlayment layer 9, and undercourse shingle layer 10 (FIG.1). Installed above the undercourse layer 10 and underlayment layer 9 isa novel shingle system 20. The shingle system 20 has at least oneshingle 22, a shingle clip 24, a drip edge 26, and a power unit 28. Eachof these components is installed in the following manner.

In step 203, a drip edge 26 having conductive bumps and at least one ofan insulative component and an insulative layer is installed on at leastone of the roof sides 95 and the roof bottom 93.

In step 205, a shingle 22 having a semiconductive transducer pathway Ais installed on at least one of the undercourse layer 10 and theunderlayment layer 9.

In step 207, a shingle clip 24 is installed on the shingle 22 tocontinue the semiconductive transducer pathway A. The shingle clip 24may be installed within an aperture 25 of the shingle 22 or may beinstalled over the semiconductive pathway A if the semiconductivepathway is situated on at least one of a top and bottom surface 23, 24of the shingle 22.

In step 209, a second shingle 22 having a semiconductive pathway A isinstalled on at least one of the undercourse layer 10 and underlaymentlayer 9. The second shingle 22 engages the drip edge 26.

In step 211, at least one electrical lead is connected to the drip edge26 at one end and to an energy collector at the second end.

In step 213, the semiconductive transducer layer transforms energy thatis then stored or harvested in the energy collector.

Many different arrangements of the various components depicted, as wellas components not shown, are possible without departing from the spiritand scope of the present invention. Embodiments of the present inventionhave been described with the intent to be illustrative rather thanrestrictive. Alternative embodiments will become apparent to thoseskilled in the art that do not depart from its scope. A skilled artisanmay develop alternative means of implementing the aforementionedimprovements without departing from the scope of the present invention.Further, it will be understood that certain features and subcombinationsmay be of utility and may be employed within the scope of thedisclosure. Further, various steps set forth herein may be carried outin orders that differ from those set forth herein without departing fromthe scope of the present methods. This description shall not berestricted to the above embodiments. It is to be understood that whilecertain forms of the present invention have been illustrated anddescribed herein, it is not to be limited to the specific forms orarrangement of parts described and shown.

1. A shingle clip being a cube and comprising: a first aperture defininga C-shape further defined as a first aperture top surface, a firstaperture bottom surface, and a first aperture end surface, the firstaperture being located on a first width face of the cube and separatingthe first width face into first upper and first lower side surfaces; anda second aperture defining a C-shape further defined as a secondaperture top surface, a second aperture bottom surface, and a secondaperture end surface, the second aperture being located on a secondwidth face of the cube, the second width face being on an opposed end ofthe first width face of the cube, the first and second apertures beingsized and shaped such that a shingle side may be positioned within;wherein the distance between the first and second aperture end surfacesis smaller than a height of the cube.
 2. The shingle clip of claim 1,wherein the first aperture upper and lower side surfaces each slopetowards the first aperture.
 3. The shingle clip of claim 1, wherein theclip is made from a conductive material.
 4. A shingle clip comprising: afirst aperture defining a C-shape further defined as a first aperturetop surface, a first aperture bottom surface, a first aperture closedend, and a first aperture open end, the first aperture being located ona first width face of the clip and separating the first width face intofirst upper and first lower side surfaces; and a second aperturedefining a C-shape further defined as a second aperture top surface, asecond aperture bottom surface, a second aperture closed end, and asecond aperture open end, the second aperture being located on a secondwidth face of the cube, the second width face being on an opposed end ofthe first width face of the cube, the first and second apertures beingsized and shaped such that a shingle side may be positioned within;wherein: the distance between the first and second aperture end surfacesis smaller than a height of the clip; a length of the clip is at least2× the height of the clip; and the clip comprises a conductive material.5. The clip of claim 4, wherein a height of the first aperture closedend is the same as a height of the first aperture open end.
 6. The clipof claim 5, wherein a height of the second aperture closed end is thesame as a height of the second aperture open end.
 7. The clip of claim6, wherein the first aperture top surface comprises a firstsubstantially planar angled portion and the first aperture bottomsurface comprises a second substantially planar angled portion; andwherein the first angled portion and the second angled portion areangled away from the first aperture open end at equal and opposingangles.
 8. The clip of claim 7, wherein the second aperture top surfacecomprises a third substantially planar angled portion and the secondaperture bottom surface comprises a fourth substantially planar angledportion; and wherein the third angled portion and the fourth angledportion are angled away from the second aperture open end at equal andopposing angles.
 9. The clip of claim 8, wherein the first aperture openend receives a shingle having a semiconductive layer disposed thereon,wherein a width of the clip generally corresponds to a width of thesemiconductive layer.
 10. The clip of claim 9, wherein thesemiconductive layer is configured as a thermoelectric generator. 11.The clip of claim 9, wherein the semiconductive layer is configured as avibrational generator.
 12. The clip of claim 9, wherein thesemiconductive layer is configured as a photovoltaic generator.
 13. Theclip of claim 9, wherein the semiconductive layer engages with a powerunit for storing energy from the semiconductive layer.
 14. The clip ofclaim 13, wherein the power unit is remote from the shingle. 15.-20.(canceled)
 21. A clip comprising: a first aperture defining a C-shapefurther defined as a first aperture top surface, a first aperture bottomsurface, a first aperture closed end, and a first aperture open end, thefirst aperture being located on a first width face of the clip andseparating the first width face into first upper and first lower sidesurfaces; and a second aperture defining a C-shape further defined as asecond aperture top surface, a second aperture bottom surface, a secondaperture closed end, and a second aperture open end, the second aperturebeing located on a second width face of the cube, the second width facebeing on an opposed end of the first width face of the cube, the firstand second apertures being sized and shaped such that a panel side maybe positioned within; wherein: the distance between the first and secondaperture end surfaces is smaller than a height of the clip; a length ofthe clip is at least 2× the height of the clip; a height of the firstaperture open end and the first aperture closed end are substantiallythe same; a height of the second aperture open end and the secondaperture closed end are substantially the same; and the clip comprises aconductive material.
 22. The clip of claim 21, wherein: the firstaperture open end of the clip receives a first panel and the secondaperture open end of the clip receives a second panel; the first andsecond panels each comprise a semiconductive material for engaging withthe clip; and engagement of the clip with the respective semiconductivelayers of the first and second panels completes a semiconductivepathway.
 23. The clip of claim 22, wherein the panel is flexible. 24.The clip of claim 22, wherein a height of each of the first aperture andthe second aperture is substantially similar to the height of therespective first and second panels, and wherein a friction fit is formedbetween the respective aperture and the respective panel in anoperational configuration.
 25. The clip of claim 21, wherein the firstaperture top surface comprises a first substantially planar angledportion and the first aperture bottom surface comprises a secondsubstantially planar angled portion; and wherein the first angledportion and the second angled portion are angled away from the firstaperture open end at equal and opposing angles.
 26. The clip of claim25, wherein the second aperture top surface comprises a thirdsubstantially planar angled portion and the second aperture bottomsurface comprises a fourth substantially planar angled portion; andwherein the third angled portion and the fourth angled portion areangled away from the second aperture open end at equal and opposingangles.